Micro-structured high-efficiency semiconductor neutron detectors

D. S. McGregor,S. L. Bellinger,W. J. McNeil,T. C. Unruh,D.S. McGregor,S.L. Bellinger,W.J. McNeil,T.C. Unruh
DOI: https://doi.org/10.1109/nssmic.2008.4775204
2008-10-01
Abstract:Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The detectors are fabricated from high purity n-type Si. Sinusoidal trenches are etched into the substrate, into which shallow p-type junctions are diffused. The trenches are then backfilled with 6LiF powder to make the device sensitive to neutrons. Thermal neutron measurements from a 0.0253 eV diffracted neutron beam yielded 17% intrinsic detection efficiency for devices with 50 micron deep trenches and 29% intrinsic detection efficiency for devices with 100 micron deep trenches.
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