A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure
Xiang-Dong Meng,Yun-Cheng Han,Lei Ren,Lian-Xin Zhang,Chuan Peng,Xiao-Yu Wang,Hou-Jun He,Xiao-Hu Hou,Shi-Yu Bai,Song Feng,Tao-Sheng Li
DOI: https://doi.org/10.1016/j.nima.2024.169683
2024-08-20
Abstract:Energy resolution and leakage current are two key parameters for semiconductor neutron detectors. Metal-Oxide-Semiconductor (MOS) detectors introduce an additional oxide layer compared to Schottky Barrier Diodes (SBDs) detectors in order to reduce leakage current. However, this also leads to a degradation in energy resolution due to the introduction of an additional dead layer. Therefore, optimizing the thickness of the oxide layer is important for MOS detectors. In this study, a 4H–SiC-based MOS thermal neutron detector was designed with comprehensive consideration of the oxide layer. Subsequently, a prototype of the detector was fabricated and tested. The prototype of the MOS detector achieved an nA-level leakage current under a reverse bias of −200 V. Additionally, it demonstrated good energy resolution performance in a moderated D-T neutron source test. The MOS detector was able to clearly distinguish between the two reaction channels of 10 B converter events, which is consistent with the theoretical branching ratio. This work highlights the potential application of 4H–SiC-based MOS detectors for thermal neutron detection.
physics, particles & fields, nuclear,nuclear science & technology,instruments & instrumentation