Study on sensitivity of the bilateral ultra-thick silicon sensors as neutron dosimeter

Yuqian Huang,Min Yu,R. Y. Yin,Zhensheng Zhang,X. Y. Zhao,Zhiyuan Zhu,Junhua Liu,Maojun Wang,Junyao Wang,Yufeng Jin
DOI: https://doi.org/10.1109/cstic.2018.8369311
2018-01-01
Abstract:The radiation dose dependent sensitivity characteristics of bilateral silicon sensors are studied to improve the radiation hardness under neutron irradiation. Sensors with different effective intrinsic base lengths using 1.5mm ultra-thick silicon substrate are fabricated and the effect of structure parameters on neutron detection sensitivity is experimentally investigated. The simulations of devices with different structures are used to study the influence of potential distribution on radiation hardness characteristics. It is found that, increasing the effective intrinsic base length can improve the sensitivity. The effect of radiation does and working current are investigated experimentally.
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