Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Ultra-Low Switching Voltage Induced by Inserting SiO 2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use As an Insulator in Resistive Random Access Memory

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory

Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

The Ultra‐Low Power Performance of A‐sinxoy:H Resistive Switching Memory

Reducing Operation Voltages by Introducing a Low-K Switching Layer in Indium–tin-Oxide-based Resistance Random Access Memory

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Improvement of Bipolar Switching Properties of Gd:SiO x RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO 2 Treatment

Engineering Interface-Type Resistance Switching Based on Forming Current Compliance in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Resistance Switching Characteristics Induced By O-2 Plasma Treatment Of An Indium Tin Oxide Film For Use As An Insulator In Resistive Random Access Memory

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory