Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Improving Performance by Doping Gadolinium into the Indium-Tin–Oxide Electrode in HfO 2 -Based Resistive Random Access Memory

Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use As an Insulator in Resistive Random Access Memory

Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes

Effects of the Oxygen Vacancy Concentration in InGaZnO-based Resistance Random Access Memory

Ultra-Low Switching Voltage Induced by Inserting SiO 2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Improvement of Bipolar Switching Properties of Gd:SiO x RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO 2 Treatment

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Ultra-high Resistive Switching Mechanism Induced by Oxygen Ion Accumulation on Nitrogen-Doped Resistive Random Access Memory

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Resistance Switching Characteristics Induced By O-2 Plasma Treatment Of An Indium Tin Oxide Film For Use As An Insulator In Resistive Random Access Memory

Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory

Illumination Effect on Bipolar Switching Properties of Gd:SiO 2 RRAM Devices Using Transparent Indium Tin Oxide Electrode