Abstract:Crack-free AlN films with threading dislocation density (TDD) below 109 cm−2 are needed for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or very thick buffer layers (>10 μm), a costly and time-consuming approach. A method for conventional metalorganic chemical vapor deposition growth of AlN/SiC films below 3 μm with greatly improved quality is presented. Focusing on substrate pretreatment before growth, we reduce average film stress from 0.9 GPa (tension) to −1.1 GPa (compression) and eliminate cracking. Next, with optimized growth conditions during initial deposition, AlN films with x-ray rocking curve widths of 123 arc-sec ( 0002) and 304 arc-sec ( 20 2 ¯ 1) are developed, and TDD is confirmed via plan view transmission electron microscopy (TEM) to be 2 × 108 cm−2. Film stress measurements including x-ray 2θ-ω, reciprocal space mapping, and curvature depict compressively stressed growth of AlN on 4H-SiC due to lattice mismatch. The thermal expansion coefficient mismatch between AlN and SiC is measured to be Δ α = α AlN − α SiC = 1.13 × 10 − 6 ° C − 1 and is found to be constant between room temperature and 1400 °C. TEM confirms the existence of dense misfit dislocation (MD) networks consistent with MD formation near SiC step edges and low MD density regions attributed to nearly coherent AlN growth on SiC terraces. These low-TDD, crack-free AlN/SiC buffers provide a platform for deep-UV optoelectronics and ultrawide bandgap electronics.

Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

MBE-grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-insulator Substrates

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd

Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution