Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Process Development and Reliability for Wafer-Level 3D IC Integration Using Micro-Bump/adhesive Hybrid Bonding and Via-Last TSVs

Study of Three-Dimensional Small Chip Stacking Using Low Cost Wafer-Level Micro-bump/B-Stage Adhesive Film Hybrid Bonding and Via-Last TSVs

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Optimization and Characterization of Low-Temperature Wafer-Level Hybrid Bonding Using Photopatternable Dry Film Adhesive and Symmetric Micro Cu Pillar Solder Bumps

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Simplified Low-Temperature Wafer-Level Hybrid Bonding Using Pillar Bump and Photosensitive Adhesive for Three-Dimensional Integrated Circuit Integration

Recent Progress on Bumpless Cu/SiO2 Hybrid Bonding for 3D Heterogeneous Integration

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Process development for 3D integration: Conductive wafer bonding for high density inter-chip interconnection

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Design, Simulation, And Process Development For 2.5d Tsv Interposer For High Performance Processer Packaging

A reliable Cu-Sn stack bonding technology for 3D-TSV packaging

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

High density 3D heterogeneous integration used in microwave modules

Materials, Processing and Reliability of Low Temperature Bonding in 3D Chip Stacking