Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Al-free Cladding-Layer Blue Laser Diodes with a Low Aspect Ratio in Far-Field Beam Pattern

High Efficient GaN-based Laser Diodes with Tunnel Junction

High-power Hybrid GaN-based Green Laser Diodes with ITO Cladding Layer

A-LOC GaAlAs/GaAs laser and its characteristics

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Structure Design of InGaN-based Blue Laser Diodes with ITO and Nanoporous GaN Cladding Layers

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

High-efficiency edge-emitting laser diodes with oxidation confinement stripe structure

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Green Laser Diodes with Low Operation Voltage Obtained by Suppressing Carbon Impurity in AlGaN: Mg Cladding Layer

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

A Modified Structure with Asymmetric and Doping Barrier Interlayers of GaAs-based Laser Diodes with Both Small Vertical Divergence Angle and Low Threshold Current

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes