Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Enhancement of the Emission Efficiency of InGaN Films by Suppressing the Incorporation of Unintentional Gallium Atoms

Increasing the Indium Incorporation Efficiency During Ingan Layer Growth by Suppressing the Dissociation of Nh3

Effect of in Incorporation Parameters on the Electroluminescence of Blue–violet InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Investigation on the corrosive effect of NH 3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Influence of Growth Rate on the Carbon Contamination and Luminescence of GaN Grown on Silicon

Growth and Characterization of High In-content InGaN Grown by MBE Using Metal Modulated Epitaxy Technique (MME)

Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Silicon and Zinc Co-Doped InGaN Films with High Luminuous Efficiency Grown by LP-MOVCD at High Growth Temperature

Gas-phase Parasitic Reactions and Al Incorporation Efficiency in Light Radiation Heating, Low-Pressure Metal–organic Chemical Vapor Deposition of AlGaN

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Abnormal InGaN Growth Behavior in Indium-Desorption Regime in Metalorganic Chemical Vapor Deposition

Effects Of Matrix Layer Composition On The Structural And Optical Properties Of Self-Organized Ingan Quantum Dots

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Intensive Luminescence from a Thick, Indium-Rich In0.7Ga0.3N Film