Abstract:Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two periods of high-In-content MQWs. For the low-In-content MQWs of three studied samples, their internal quantum efficiency (IQE) shows a rising trend as the emission wavelength increases from 406 nm to 430 nm due to the suppression of carriers escape from the wells to the barriers. However, for the high-In-content MQWs, the sample IQE falls rapidly with a further increase of emission wavelength from 496 nm to 575 nm. Theoretical calculation reveals that the electron-hole wave function overlap in the high-In-content MQWs is reduced because of an increase in the internal polarization field as indium content is increased. In addition, time-resolved photoluminescence decay curves show that the carriers generated in the low-In-content MQWs can be effectively transferred to the high-In-content part through the reabsorption process. However, the transfer time gradually becomes longer as emission wavelength increases, which means a reduction of carrier transfer rate between the different indium content MQWs. Furthermore, nonradiative recombination is enhanced in the high-In-content MQWs with longer emission wavelength due to the decline of crystal quality. Therefore, the fast drop of IQE for high-In-content MQWs can be attributed to the increase of the internal polarization field, the decrease of carrier transfer efficiency, and the enhanced nonradiative recombination. This research has a certain guiding value for an understanding of the recombination mechanism in the InGaN/GaN MQWs and for achieving high quality multiple-wavelength LEDs with better performance.

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

Influence of InGaN Growth Rate on the Localization States and Optical Properties of InGaN/GaN Multiple Quantum Wells

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different in Gradients

Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Luminous Performance Improvement of InGaN/GaN Light-Emitting Diodes by Modulating in Content in Well Layers

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Anomalous Electroluminescent Blue-Shift Behavior Induced by Well Widths Variance and Localization Effect in InGaN/GaN Multi-Quantum Wells.

Impact of Localization on the Optical Properties of InGaN-Based Red Light-Emitting Diodes Grown on a Silicon Substrate

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells