Abstract:Lateral Double diffused Metal Oxide Semiconductor (LDMOS) transistors are widely used in HV output circuit and its Electrostatic Discharge (ESD) problem have been well studied. LDMOS embed Silicon Controlled Rectifier (LDMOS-SCR) can be used to improve LDMOS ESD robustness. In order to further enhance the ESD self-protection capability of LDMOS-SCR, a new device LDMOS-SCR with a floating P+ implant region (FP-LDMOS-SCR) is proposed in this paper. Due to the floating P+ implant region is placed near the drain end, It2 of the new FP-LDMOS-SCR device increases obviously, compared with traditional LDMOS and LDMOS-SCR devices. The FP-LDMOS-SCR's It2 with one floating P+ is 1.3 A and that with two floating P+ is 2.7 A. The results of Technology Computer Aided Design (TCAD) simulations will be presented in this paper to help analysis the physical mechanism and observe the ESD behavior of the LDMOS-SCR. The proposed FP-LDMOS-SCR, same driver capability with LDMOS, can be applied in HV output circuit and also provide its ESD self-protection through shunted ESD stress to ground. (C) 2013 Elsevier Ltd. All rights reserved.

Novel Silicon-Controlled Rectifier with Snapback-Free Performance for High-Voltage and Robust ESD Protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Novel Silicon-Controlled Rectifier (SCR) for Digital and High-Voltage ESD Power Supply Clamp

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

A Robust Polysilicon-Assisted SCR in ESD Protection Application

A novel straight through-MOS-triggered SCR for on-chip ESD protection

High Holding Voltage Scr for Robust Electrostatic Discharge Protection

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

A Novel SCR for ESD Protection in ICs

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Segmented SCR for High Voltage ESD Protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications