Effects of annealing and oxidizing acid treatment on quality of diamond film fabricated by chemical vapor deposition method

Hao ZHAI,Fen LONG,Zhi-ming YU,Jian WANG
DOI: https://doi.org/10.3969/j.issn.1673-0224.2013.04.013
2013-01-01
Abstract:Using H2 and CH4 as reaction gas source, the diamond film was prepared on Mo substrate under different temperatures by hot filament chemical vapor deposition method (HFCVD). The morphology, quality properties of post-treatment process were analyzed by field emission scanning electron microscopy (FESEM), Raman spectrometer system (RS) and X-ray diffraction. The results indicate that the film with good crystal form, bigger and homogeneous grains with average grain size of 0.5 μm can be obtained under 700°C depositing; the residual stress is 2.72 GPa; after annealing in a hydrogen atmosphere, Raman peaks intensity ratio of diamond and graphite increases from 2.780 0 to 4.451 6, the relative content of sp2 carbon decreases by 37.6% (mass fraction), which shows film quality enhancement;, the content of sp2 carbon decreases by 26.8% and 69.0% ~73.0% of trans-PA is removed after H2O2 (aq) treatment, and the thermal stress is released.
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