Abstract:A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volumemethod. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Experimental and Numerical Study on the Power and Fluid Flow during the Silicon Crystal Growth Process by Cz Method

Global simulation of silicon crystal Czochralski growth. I. Characteristics of heat transfer and fluid flow

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Numerical Simulation of SiC Crystal Growth During Physical Vapour Transport Using the Lattice Boltzmann - Phase Field Model

Modeling and Simulation of Si Crystal Growth from Melt

Global Simulation Of A Czochralski Furnace For Silicon Crystal Growth Against The Assumed Thermophysical Properties

Study on Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth Based on Global 3D Numerical Simulation

A Hydrodynamics Model of Silicon Carbide Single Crystal Growth by PVT and Finite Element Analysis

Global Heat Loss and Thermal Stress Analysis in Czochralski Crystal Growth

Effects of Thermophysical Properties on Silicon Single Crystal Czochraski Growth Processes

Computer modeling of crystal growth of silicon for solar cells

Numerical Simulation of the Natural Convection Influence on Silicon Single Crystal by CZ

Numerical simulation of combined flow in Czochralski crystal growth

Comparison and application of several turbulence models in simulation of crystal growth

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Numerical Simulation of A Czochralski Silicon Crystal Growth with A Large Diameter 300mm under A Cusp Magnetic Field

Crystal Surface Heat Transfer During the Growth of 300mm Monocrystalline Silicon by the Czochralski Process

Numerical Simulation Study on the Front Shape and Thermal Stresses in Growing Multicrystalline Silicon Ingot: Process and Structural Design

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique