Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Numerical Simulation of SiC Crystal Growth During Physical Vapour Transport Using the Lattice Boltzmann - Phase Field Model

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

A Hydrodynamics Model of Silicon Carbide Single Crystal Growth by PVT and Finite Element Analysis

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Numerical Simulation of Phase Field Model for Spherulite Growth of Semi-Crystalline Polymers Using FD-FV-LB Method.

Modeling and Simulation of Si Crystal Growth from Melt

Anisotropic Lattice Boltzmann-phase-field Modeling of Crystal Growth with Melt Convection Induced by Solid-Liquid Density Change

Numerical Simulation of A Czochralski Silicon Crystal Growth with A Large Diameter 300mm under A Cusp Magnetic Field

NUMERICAL SIMULATION OF CONCENTRATION FIELD DURING THE GROWTH OF SINGLE CUSP MAGNETIC FIEDLD

Numerical Studies of Semiconductor Materials Solidification With Applied Electric and Magnetic Fields

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Liquid to Crystal Si Growth Simulation Using Machine Learning Force Field

Numerical design of induction heating in the PVT growth of SiC crystal

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Numerical Simulation Study on Cz Growth of Silicon Single Crystal in a Magnetic Field

Numerical Simulation of Lec Growth of Inp Crystal with an Axial Magnetic Field

Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Numerical Simulation in Czochralski Si Melt under a Cusp Magnetic Field

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization