Abstract:Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. Through complementary support by the Air Force and DARPA, we were able to acquire a superconducting magnet which can provide axial magnetic fields of up to 30 kGauss for melt stabilization in the NASA facility for heat pipe based vertical BridgmanStockbarger growth. It was found that axial fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantly alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the applied magnet field to 30 kGauss is found to have a fundamental effect on dopant segregation. The initial transient segregation behavior is identical with that predicted by Tiller e t al. for diffusion controlled plane front solidification. Within the transient region, the dopant concentration increased by in excess of 600%, a concentration increase which in the magnitude has thus far only been observed in the ASTP experiment conducted in the reduced gravity environment of space. While the apparent achievement of diffusion controlled growth, as indicated by theory, is contingent on the validity of the available database, the experimental results demonstrate that magnetic melt stabilization can be valuable in emulating a limited spectrum of reduced gravity conditions. The experiments also point to the need, in space, for extended equilibration of melts prior to solidification, and alternatively, at the need for force convective mixing in a microgravity environment. . Emphasis was also place on the exploration of the potential of KC-135 flights for preliminary studies of the effects of reduced gravity environment on the wetting behavior of semiconductor systems in growth configuration. The experiments indicated different solidification characteristics; however, it was not possible to obtain quantitative data on wetting. The primary problem consisted of deficiencies of the available hardware. The limited number of experiments conducted does not permit any conclusions on the merits of KC-135 flights for semiconductor processing research. It is established, however, that the effective use of this facility will require acquisition of appropriate hard ware. At professional meetings, presentations were made on the potential of reduced gravity environment of R&D in materials processing. -49https://ntrs.nasa.gov/search.jsp?R=19890004306 2019-11-28T09:08:54+00:00Z

Numerical Studies of Semiconductor Materials Solidification With Applied Electric and Magnetic Fields

Numerical Simulation of SiC Crystal Growth During Physical Vapour Transport Using the Lattice Boltzmann - Phase Field Model

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

A Model for Solidification under the Influence of Thermoelectric and Magnetohydrodynamic Effects: Application to Peltier Demarcation During Directional Solidification with Different Gravitational Conditions

Application of Phase-Field Method to Numerical Simulation of Solidification

Heat Flow Control and Segregation in Directional Solidification: Development of an Experimental and Theoretical Basis for Bridgman-Type Growth Experiments in a Microgravity Environment

Numerical Modeling of Magnetic-Field-sensitive Semiconductor Devices

Influence of High Magnetic Fields on Phase Transition and Solidification Microstructure in Mn-Sb Peritectic Alloy

Numerical Simulation of Lec Growth of Inp Crystal with an Axial Magnetic Field

Analysis of Various Magnetic Fields Effects on the Transport of Momentum, Heat in a Large Silicon Crystal Growth

Numerical Simulation Study on Cz Growth of Silicon Single Crystal in a Magnetic Field

Multi-physics Simulation of Dendritic Growth in Magnetic Field Assisted Solidification

Numerical Simulation of Electromagnetic Phenomena and Solidification under a Pulsed Magnetic Field

Numerical study of the influence of an applied electrical potential on the solidification of a binary metal alloy

Research on numerical simulation for Bridgman-Hg1-X Cdx Te crystal growth in magnetic field

NUMERICAL SIMULATION OF CONCENTRATION FIELD DURING THE GROWTH OF SINGLE CUSP MAGNETIC FIEDLD

NUMERICAL SIMULATION OF TWO-PHASE SOLIDIFICATION PROCESS OF HOLLOW BILLET UNDER TRAVELING MAGNETIC FIELD

Numerical Study on Solidification Characteristics under Pulsed Magnetic Field

Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth

Thermoelectric Magnetohydrodynamic Effects on the Crystal Growth Rate of Undercooled Ni Dendrites.