Heat Flow Control and Segregation in Directional Solidification: Development of an Experimental and Theoretical Basis for Bridgman-Type Growth Experiments in a Microgravity Environment

F. A.
Abstract:Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. Through complementary support by the Air Force and DARPA, we were able to acquire a superconducting magnet which can provide axial magnetic fields of up to 30 kGauss for melt stabilization in the NASA facility for heat pipe based vertical BridgmanStockbarger growth. It was found that axial fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantly alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the applied magnet field to 30 kGauss is found to have a fundamental effect on dopant segregation. The initial transient segregation behavior is identical with that predicted by Tiller e t al. for diffusion controlled plane front solidification. Within the transient region, the dopant concentration increased by in excess of 600%, a concentration increase which in the magnitude has thus far only been observed in the ASTP experiment conducted in the reduced gravity environment of space. While the apparent achievement of diffusion controlled growth, as indicated by theory, is contingent on the validity of the available database, the experimental results demonstrate that magnetic melt stabilization can be valuable in emulating a limited spectrum of reduced gravity conditions. The experiments also point to the need, in space, for extended equilibration of melts prior to solidification, and alternatively, at the need for force convective mixing in a microgravity environment. . Emphasis was also place on the exploration of the potential of KC-135 flights for preliminary studies of the effects of reduced gravity environment on the wetting behavior of semiconductor systems in growth configuration. The experiments indicated different solidification characteristics; however, it was not possible to obtain quantitative data on wetting. The primary problem consisted of deficiencies of the available hardware. The limited number of experiments conducted does not permit any conclusions on the merits of KC-135 flights for semiconductor processing research. It is established, however, that the effective use of this facility will require acquisition of appropriate hard ware. At professional meetings, presentations were made on the potential of reduced gravity environment of R&D in materials processing. -49https://ntrs.nasa.gov/search.jsp?R=19890004306 2019-11-28T09:08:54+00:00Z
Materials Science,Physics,Engineering
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