Abstract:The main method for producing single silicon crystal is the Czochralski (CZ) method, which is widely utilized to grow high-quality, large-size semiconductor crystals. The ideal physical property parameters of the materials that build the various parts of the crystal growth furnace can optimize the thermal field distribution during the crystal growth process. It also can improve the crystal quality and reduce the energy consumption. In this work, we study the effect of physical property parameters, including thermal conductivity, specific heat, and density of the insulation material inside the heat shield, on the global thermal field during the crystal growth process. The results show that the thermal conductivity significantly affects the deflection of the melt-crystal (m-c) interface, the thermal stress, the axial temperature gradient in the crystal, and the heater power. The deflection of the m-c interface increases with increasing thermal conductivity. The thermal stress increases with the increase of the interface deflection, which will have an impact on the crystal quality. The axial temperature gradient in the crystal increases with decreasing thermal conductivity. In contrast, the temperature distribution in the melt shows no significant change, which will increase the output of the single silicon crystal and ultimately reduce the production cost. Meanwhile, the heater power decreases with decreasing thermal conductivity. The material's specific heat and density magnitudes show almost no effect on these parameters. Our results suggest that selecting insulation materials inside the heat shield with low thermal conductivity can improve the crystal quality and reduce the production cost.

Study on Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth Based on Global 3D Numerical Simulation

Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Hot-zone design and optimization of resistive heater for SiC single crystal growth

The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Influence of particle parameters on the melting/migration of silicon particles and turbulent heat transfer during CCZ monocrystalline silicon growth

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Simulation of Heat Transfer in a Vertical Tubular CVD Reactor

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Optimization of silicon ingot manufacturing for high production rates

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method