Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field

HP Yu,J Wang,YK Sui,XL Dai,GP An
DOI: https://doi.org/10.1016/s1004-9541(06)60031-1
2006-01-01
Abstract:Simulations of heat transfer and oxygen transport during a Czochralski growth of silicon with and without a cusp magnetic field were carried out. A finite volume method with a low-Reynolds number K-epsilon model proposed by Jones-Launder was employed. The numerical results were compared with the experimental data in the literature. It is found that the calculated results are in good agreement with the experimental data.
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