Abstract:As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxide-silicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

Research Progress of SONOS Nonvolatile Memory Device

Progress of High-K Dielectrics Applicable to Sonos-Type Nonvolatile Semiconductor Memories

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

A novel combination FN/BBHH erase scheme for scaled SONOS device

Investigating the Effect of Doping Amorphous Silicon Nitride on Retention Characteristics of Sonos Device by Dft Calculation

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

A Novel Reverse Read Array Architecture for Embedded SONOS Type Flash Memory

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Array and High Voltage Path Design for SONOS Flash Memory

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Investigation and three implementations for low power self-aligned 1.5-T SONOS flash device

Research progress on non-volatile memory based storage system

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

The Development of Nanometer Solid State Storage Memory

Nanoscale resistive switching devices for memory and computing applications

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals