Study on Preparation and Properties of TiO_2-Doped Nanoporous SiO_2 Films

Liu Qing-ju
2007-01-01
Abstract:TiO_2-doped nanoporous SiO_2 films are perpared on silicon substrate by adoping molecular-template, sol-gel method and spinning coating.The properties of the films are analyzed and characterized by DSC-TGA,FTIR, XRD,SAXS,AFM,atomic profiler,paper wiping and adhesive tape stripping method.The results show that the best heat treatment temperature is 400℃.TiO_2-doped SiO_2 film is porous and amorphous which has good mechanical prop- erty.The average pore diameter is 87.4nm in one-layer film and 62.8nm in two-layer film.The average thickness is 538.7nm in one-layer film and 1032.3nm in two-layer film.
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