Study of Nanoimprint Technology Without Residual Layer Based on Photolithography Mask

ZHANG Ya-jun,DING Yu-cheng,LU Bing-heng
2007-01-01
Abstract:For the removal of residual layer after template is released during nanoimprint lithography,a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.When the conventional photolithography mask is employed as UV-nanoimprint template,the resist beneath the chromium layer on the template is unexposed due to the light-blocking of the chromium layer so that the residual layer can be easily removed with a simple developing process.The experimental results indicate that print patterns without residual layer can be obtained because the new UV-nanoimprint technology inherits the merits of nanoimprint and photolithography.Simultaneously,the over-etching or under-etching due to non-uniform of thickness of the residual layer is avoided because the process of etching the residual layer is not employed.
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