Process Research of Novel UV Nanoimprint Lithography Resist with Enhanced Anti-Sticking Property

Li Zhongjie,Lin Hong,Jiang Xuesong,Wang Qingkang,Yin Jie
DOI: https://doi.org/10.3969/j.issn.1671-4776.2010.03.010
2010-01-01
Abstract:In order to reduce the contact adhesion force during the demolding process in UV nanoimprinting lithography(UV-NIL),a new anti-sticking UV nanoimprinting resist with enhanced fluidity was developed.The resist consists of BMA as the monomer,a specific ratio of the cross-linking agent and photoinitiator.IL-NP04 system was used in the experiment which was fabricated by the research team of Shanghai Jiao Tong University independently.The experiment shows that the thcikness of photoresist mask is 1.21 μm,the depth of nano-structure is 246 nm and the period of nano-structure is 937.5 nm.The results indicate that the resist exhibits a high reliability and resolution of pattern transfer without modification on the surface of the quartz stamp,and the process steps of a anti-sticking layer modification in UV-NIL is reduced by using this resist with anti-sticking property.
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