Fast Switching <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Power MOSFET With a Trench-Gate Structure
Hang Dong,Shibing Long,Haiding Sun,Xiaolong Zhao,Qiming He,Yuan Qin,Guangzhong Jian,Xuanze Zhou,Yangtong Yu,Wei Guo,Wenhao Xiong,Weibing Hao,Ying Zhang,Huiwen Xue,Xueqiang Xiang,Zhaoan Yu,Hangbing Lv,Qi Liu,Ming Liu
DOI: https://doi.org/10.1109/LED.2019.2926202
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010)
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-Ga
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epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the
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-Ga
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channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga
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MOSFET with 2-
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gate length is characterized to present short switching time, including turn-on time (
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) of 28.6 ns and turn-off time (
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) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance (
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) of 37 pF/mm, output capacitance (
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) of 42 pF/mm, and reverse transfer capacitance (
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) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of
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-Ga
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O
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MOSFET for the high-speed switching applications.