A New Single Gate MOS Controlled Thyristor with Current Saturation and Large SOA

S Huang,GAJ Amaratunga,F Udrea,P Waind,L Coulbeck,P Taylor
DOI: https://doi.org/10.1109/icsict.2001.981447
2001-01-01
Abstract:A novel single gate MOS controlled current saturation thyristor (MCST) device is proposed. In the on-state the MCST operates in thyristor-like mode at low anode voltage and enters the IGBT-like mode automatically with increasing anode voltage, offering a low on-state voltage drop and current saturation capability. The saturation current density of the MCST is strongly dependent on the on-set voltage or the p+ buffer/n-well junction, leading to its excellent safe operation area (SOA) and making it suitable for high power applications
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