Abstract:A novel low turn-off loss high-speed silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring a self-adapted parasitic thyristor is proposed and investigated. The parasitic thyristor is introduced by inserting double deep P-regions (DDP) between the N-drift and an n-type carrier-stored layer (NCS). In the on-state with low anode voltage ( VA ), the thyristor is easily triggered as the sum of current gains of parasitic transistors (P-anode/N-drift/P-regions and N-drift/P-regions/NCS) equals one, then the DDP LIGBT could enter the bipolar conduction state and achieve low on-state voltage ( V-on ). As the VA increases, the nMOS of DDP LIGBT enters saturation. The electron injection of DDP LIGBT is suppressed by the saturation characteristic of the nMOS. Thus, the saturation current value is similar to that of Con. LIGBT. More importantly, during the turning-off period, not only the on-state parasitic transistor at low V-A but also the high electric field around the deep P-regions/N-drift junction under high V-A accelerates the extraction of excess carriers and shortens the turn-off time. Therefore, both the turn-off time and the turn-off loss (E-off ) are obviously decreased. For the short-circuit state, the DDP LIGBT transfers the high-temperature point from the current crowding cathode side to the anode side, optimizing heat distribution and extending short-circuit time. Compared with Con. LIGBT at J(A)= 100 A/cm (2) , the DDP LIGBT not only decreases the E-off /V-on by 82%/20% at the same V-off /E-on , but also improves the short-circuit withstanding time by 67%.

Fabrication and Investigation of a Lateral Insulated Gate-Bipolar-Transistor with Ultrafast Turn-Off Speed

A Study of Fast Switching, Anode Shorted Lateral Insulated Gate Bipolar Transistor

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

A Novel High Speed Lateral Insulated Gate Bipolar Transistor

Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability

Ultrafast and Low-Turn-OFF Loss Lateral IEGT with a MOS-Controlled Shorted Anode

A Novel Fast-Switching SOI LIGBT with Anode Junction Paralleled by a Diode

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor with Double Deep P-Regions

A Dual-Gate and Dielectric-Inserted Lateral Trench Insulated Gate Bipolar Transistor on a Silicon-on-insulator Substrate

A novel dual gated lateral MOS-bipolar power device

Area-Efficient Fast-Speed Lateral IGBT with a 3-D N-Region-controlled Anode

Operation mechanism and performance optimization for a novel ultralow loss SOI LIGBT with high current capability

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

High Voltage Lateral Bidirectional Super Junction IGBT with Fast Turn-off Speed

Novel Integrated Double Pmos SOI-LIGBT with Low Loss and High Short-Circuit Capability

A Novel High Speed Lateral Igbt with A Self-Driven Second Gate

A high speed SOI LIGBT with electronic barrier modulation structure

An Ultralow Turn-Off Loss SOI-LIGBT with a High-Voltage P-I-n Diode Integrated on Field Oxide

An Injection Enhanced LIGBT on Thin SOI Layer Compatible with CMOS Process