Abstract:In recent years, with the continuous development of installed grid capacity and renewable energy, DC power transmission and distribution technologies have developed rapidly. As one of the most important high power semiconductor devices, the integrated gate commutated thyristor (IGCT) has great potential in DC grid application. The gate-cathode blocking property is the key for device packaging and working. Based on the corrosion process of the GCT chip, two methods are proposed for improving the consistency of gate-cathode blocking voltage in this paper. Introduction With fast growing power generation capacity and evolving clean energy, DC transmission and distribution technologies have developed rapidly recent years, due to advantages such as large transport capacity, extra long-distance transportation and lower loss. Integrated gate commutated thyristor (IGCT) is a kind of fully controlled power electronic device and its excellent blocking voltage and high current turn-off capability make it suitable for high-capacity applications such as DC breakers[1, 2] and SVCs, etc. However, there are many important factors influencing the usage of IGCT, the properties between gate and cathode is one of them. This paper analyzes and discusses the corrosion process of the GCT chip part of IGCT, and proposes two corrective methods from the aspects of process sequence and process operation based on process and device simulation results. Process Introduction of Gate-Cathode Units Figure 1 shows the schematic of the integrated gate commutated thyristor (IGCT), which consists of the GCT chip, the housing package and the gate drive circuit. The turn-off process of IGCT is shown in Figure 2[3], through the instant applied reverse voltage provided by the gate driver between gate and cathode, the cathode current is transferred to the gate. After this transformation, the device changes into an open-gate PNP transistor and turns off the current gradually. Figure 1. The schematic of an IGCT. To complete the transformation successfully, the PN junction between the gate and the cathode must withstand the reverse voltage applied by the external drive. Any PN junction unit with a lower

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