Abstract:In order to investigate deeply the luminescent mechanism of amorphous oxygenated Silicon nitride(a-SiNx∶O)film,the a-SiNx∶O thin films were prepared by plasma enhanced chemical vapor deposition(PECVD)at room temperature.By adjusting the flow rate ratio(R)of silane(SiH4)to ammonia(NH3),photoluminescence(PL)with peak position tunable in the visible range from 2.06 to 2.79 eV can be realized.In absorption spectra of a-SiNx∶O films,the location of absorption peaks were in good agreement with those of corresponding PL.It suggested that the PL originates from radiative recombination at luminescent defect state.Based on the calculation of the energy distance between optical absorption edge and the position of absorption peak,the location of this luminescent defect state was determined to be about 0.65 eV underneath the absorption edge.From the analysis on bonding concentration in Fourier transform infrared(FTIR)spectra and the deconvolution of Si 2p peak in X-ray photoelectron spectra(XPS),it was found that the enhancement of PL was proportional to the increase of N-Si-O bonding concentration.Both of the PL intensity and N-Si-O bonding concentration reached the maximum when R=1∶4.The experimental results further certified that luminescent defect state in a-SiNx∶O film was closely related to N-Si-O bonding configuration.Finally,an energy band model for photoluminescence of a-SiNx∶O films was constructed.The carriers were pumped to the exited states,and then relaxed to energy levels of defect states,afterwards recombined via transition between defect state levels and valence band maximum to emit photons.In addition,the phenomenon of the redshift of PL peak with the increase of the flow rate ratio R may arise from two possible reasons,i.e.the shifting of energy level at the maximum position of density of defect state caused by the transformation of N-Si-O bonding configuration and upward shift of valence band maximum arising from the reduction of optical band gap.

PHOTOLUMINESCENCE STUDY OF DEFECTS IN SI+ ION IMPLANTED THERMAL SIO2 FILMS

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Luminescence from Si/SiO 2 with Si Implantation

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Investigation on luminescent defect state related to N-Si-O bondingin amorphous oxygenated Silicon nitride film

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer