Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

Investigation on 4H SiC MOSFET with Three-Section Edge Termination

4H-SiC trench gate MOSFETs with field plate termination

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Impact of the Transition Region Between Active Area and Edge Termination on Electrical Performance of SiC MOSFET

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

A Robust and Area-Efficient Guard Ring Edge Termination Technique for 4H-Sic Power MOSFETs

Termination Design of 6.5kV SiC MOSFET with Epitaxial Current Spreading Layer

Improved Etched Multistep JTE for UHV SiC Power Devices

Simulation Study on Single-Event Burnout Reliability of 4H-Sic Trench Gate MOSFET with Combined P-buried Layer

(Invited) Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

4H-Sic Trench-gate MOSFET with JTE Termination

Investigation on Surge Current Capability of 4H-Sic Trench-Gate MOSFETs in Third Quadrant under Various VGS Biases

Reliability Investigation of 4H-Sic MOSFET Based on TCAD Simulation

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile