Gallium Arsenide Power Amplifier Failure Analysis

Pengbo Jiang,Yongda Hu,Shengxiang Bao,Jie Chen,Qiang Li,Zongzhi Duan,Tao Hong,Chuan Luo,Huan Liu

DOI: https://doi.org/10.1109/icept.2018.8480715

2018-01-01

Abstract:In a loading experiment of a microwave power amplifier, it was found that a gallium arsenide power amplifier chip failed. The cracking of the chip was observed by an optical microscope, and then the damage of the microstrip transmission line on the chip surface was observed by a scanning electron microscope. The microstrip transmission line breaks, forming a small spherical protrusion (Figure 1). Below the break in the transmission line is a long crack on the chip that runs through the chip. The content of Al, Au, and Si at the turning site of the microstrip transmission line was found to be 3%, 14% and 3%, and the contents of Al, Au, and Si at the bottom of the break were 1%, 11% and 2%, that is, the content of the three sites is higher than the bottom of the disconnection site. It is analyzed that when a large current passes through the microstrip transmission line, the gold layer at the fusion site is too thin due to the uneven thickness of the gold layer during electroplating. When a large current is passed, electromigration occurs, so that there are holes in the rolled microstrip line; after a period of time after electromigration, the transmission line becomes thinner, thinner, and the resistance increases. After the same current flows, a large amount of heat is generated, the excess heat cannot be conducted immediately, resulting in a local temperature increase; the local temperature may even reach about 1000° C, so that the gold layer melts and polycondenses to form a ball (FIG. 1), or the aluminum interconnect wiring on the chip surface vaporizes instantaneously, breaking the gold layer on the surface. Due to the transient high temperature in the damaged area, the local temperature rise of the GaAs chip is very large, and the thermal expansion is very severe; while the vicinity of the chip is still at indoor temperature, when the thermal expansion stress propagation speed is higher than the chip's thermal conduction speed, And the stress intensity is greater than the chip can withstand, the chip cracks and spreads along the most fragile crystal face of the GaAs single crystal, so the crack runs transversely across the entire chip.