A Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Losses
Xia, Yun,Chen, Wanjun,Sun, Ruize,Li, Zhaoji,Zhang, Bo
DOI: https://doi.org/10.1007/s11664-021-09142-w
IF: 2.1
2021-01-01
Journal of Electronic Materials
Abstract:High reverse recovery charge (QRR) and high switching losses have become the main factors that constrain the performance and application area of a superjunction MOSFET (SJ-MOSFET). To reduce QRR and switching losses, an SJ-MOSFET with p-type Schottky diode and source field-plate is proposed and investigated. The p-type Schottky diode consists of Schottky contact and p-base, which is reverse series-connected with body p–n junction diode. The source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of an n-pillar. During the reverse conduction state, the p-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, an electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower QRR with almost no sacrifice in other characteristics. Moreover, with reduced gate area, the proposed device also exhibits 47.4% and 66.0% lower gate charge (QG) and gate to drain charge (QGD), respectively. The significantly reduced QG, QGD, and QRR contribute to an overall improvement in switching losses and result in a decrease of over 54.8% in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.