Abstract:In growing InGaN/GaN multiple quantum wells (MQWs) with the technique of metal-organic chemical vapor deposition (MOCVD) the introduction of an appropriate amount of H-2 into the N-2 carrier gas for the growth of the GaN barrier layers can effectively improve the crystalline quality of the well/barrier interface and therefore enhance the luminescence efficiency of the quantum wells. In this work, we carried out detailed photoluminescence (PL) spectroscopic measurements on the luminescence properties of InGaN/GaN MQWs in the device structure for blue-light laser diodes, and the effects of H-2 in the carrier gas for GaN barrier growth on the MQWs, including the improved interface quality, the enhanced luminescence and the underlying mechanisms, have been investigated. The PL spectra of the InGaN/GaN MQWs acquired at room temperature reveal that the introduction of 2. 5% H-2 in the N-2 carrier gas leads to increased emission efficiency by 75% , blue-shifted peak energy by 17 meV, and narrowed full width at half maximum (FWHM) by 10 meV. With the PL spectra measured at varied excitation powers, the quantum-confined Stark effect (QCSE) and band-filling effect on the emission performance of the MQWs have been distinguished, and the QCSE effect is found to dominantly determine the emission energy and width, which can be effectively reduced by the introduction of H-2. Upon the complete screening of the QCSE effect, the peak energy of the MQWs emission is located at 2. 75 eV. The dependence of the PL spectra on temperature indicates that the introduced H-2 in the carrier gas can also reduce the carrier localization effect and narrow the energy fluctuation of the well potential, which leads to the narrowed PL spectral width in the samples grown with the mixture of H-2/N-2 carrier gas. The variation of the PL intensity with respect to temperature reveals that the physical nature of the nonradiative recombination centers at the interface is not influenced by the introduction of H-2, but the amount of these centers is greatly reduced, which accounts for the improved emission efficiency. The results of time-resolved PL measurements exhibit that the introduced H-2 in the carrier gas has no impact on the nonradiative recombination lifetime, but causes a shorter radiative recombination lifetime, which further confirms the influences of H-2 introduction on both QCSE screening and nonradiative recombination centers. The in-depth analyses of the PL results have revealed that the introduction of H-2 in the N-2 carrier gas for GaN barrier growth can significantly improve the crystalline quality of InGaN/GaN MQWs and therefore enhance the light emission performance. This work has demonstrated PL spectroscopy as a powerful technique in characterizing the optical properties of semiconductor quantum structures, and the spectral findings could provide helpful insight into the growth of InGaN/GaN MQWs.

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Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Effect of Hole Blocking Layer on V-pit Hole Injection and Internal Quantum Efficiency in GaN-based Yellow LED

Effect of Hydrogenation on the Luminescence Evolution of Gan under Low Energy Electron Beam Irradiation

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Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Effect of Si Doping in Barriers of Ingan/Gan Multiple Quantum Wells on the Performance of Green Light-Emitting Diodes

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier

Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

Effect of In-Situ SiNx Grown with Different Carrier Gas on Structural and Electrical Properties of GaN-based MISHEMTs

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Structural and Electrical Characteristics of GaN HEMTs with in Situ SiN X Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas

Improved Interface Quality and Luminescence Capability of InGaN/GaN Quantum Wells with Mg Pretreatment

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.