Abstract:Nanocrystalline diamond (NCD) films are attractive for many applications due to their smooth surfaces while holding the properties of diamond. However, their growth rate is generally low using common Ar/CH4 with or without H2 chemistry and strongly dependent on the overall growth conditions using microwave plasma chemical vapor deposition (MPCVD). In this work, incorporating a small amount of N2 and O2 additives into CH4/H2 chemistry offered a much higher growth rate of NCD films, which is promising for some applications. Several novel series of experiments were designed and conducted to tailor the growth features of NCD films by fine-tuning of the gas-phase compositions with different amounts of nitrogen and oxygen addition into CH4/H2 gas mixtures. The influence of growth parameters, such as the absolute amount and their relative ratios of O2 and N2 additives; substrate temperature, which was adjusted by two ways and inferred by simulation; and microwave power on NCD formation, was investigated. Short and long deposition runs were carried out to study surface structural evolution with time under identical growth conditions. The morphology, crystalline and optical quality, orientation, and texture of the NCD samples were characterized and analyzed. A variety of NCD films of high average growth rates ranging from 2.1 μm/h up to 6.7 μm/h were successfully achieved by slightly adjusting the O2/CH4 amounts from 6.25% to 18.75%, while that of N2 was kept constant. The results clearly show that the beneficial use of fine-tuning of gas-phase compositions offers a simple and effective way to tailor the growth characteristics and physical properties of NCD films for optimizing the growth conditions to envisage some specific applications.

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High-speed growth of high-quality polycrystalline diamond films by MPCVD

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Growth and morphological studies of (100) textured diamond thin films by microwave plasma-enhanced chemical vapor deposition

Thermodynamic Analyses on (111) and (100) Facets Orientation Growth of CVD Diamond Film

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition

Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Influence of O2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Highly oriented diamond growth on SixGe1−x (100) thin films