Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

Effect of Cupric Ion Concentration on the Etching Behavior of Copper in Electrogenerated Chemical Polishing (EGCP)

Electrogenerated Chemical Polishing of Copper

Analysis of the Polishing Ability of Electrogenerated Chemical Polishing

Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

Effect of Viscous Film on Electrochemical Polishing of Copper Microstructures

Electrolyte Composition and Removal Mechanism of Cu Electrochemical Mechanical Polishing

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Research on the Copper Electrochemical Polishing in Phosphoric Acid

Research on Effects of Slurry Additives in Cucmp for Ulsi Manufacturing

On the Reaction Mechanism of a Hydroxyethylidene Diphosphonic Acid-Based Electrolyte for Electrochemical Mechanical Polishing of Copper

Material Removal and Surface Modification of Copper under Ultrasonic-Assisted Electrochemical Polishing

Investigation on Flatness and Surface Integrity of Pure Copper Processed by Electrochemical Mechanical Polishing

Effects of High Dielectric Constant Abrasives on ECMP

The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Dry electrochemical polishing of copper alloy in a medium containing ion-exchange resin

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Preparation of Flat and Smooth Copper Surface by Jet Electrochemical Machining and Electrochemical Polishing

Chemical processes in the chemical mechanical polishing of copper

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content