Investigation on Flatness and Surface Integrity of Pure Copper Processed by Electrochemical Mechanical Polishing

Jiang Guo,Di Wu,Lin Niu,Bo Pan,Zuotao Liu,Xiaoguang Guo,Zhuji Jin,Renke Kang
DOI: https://doi.org/10.1016/j.procir.2020.02.301
2020-01-01
Procedia CIRP
Abstract:Pure copper is widely used in integrated circuit (IC) and national defense fields for its good electrical and thermal conductivity. Extreme requirements such as large diameter to thickness ratio, low flatness and high surface integrity for thin substrates of pure copper are difficult to achieve due to its poor rigidity and high plasticity. Processing methods relying on mechanical action such as turning, lapping and chemical mechanical polishing (CMP) may cause high residual stress and subsurface damage which results in deteriorating the flatness and surface integrity of substrates. As an alternative method, electrochemical mechanical polishing (ECMP) is adopted to achieve low flatness and high surface integrity of copper substrates. Flatness and surface integrity of substrates after ECMP were investigated in this paper. Surface integrity indicators including surface roughness, residual stress, micro hardness, and subsurface damage were quantitatively evaluated. The results show that flatness, surface roughness, micro hardness, residual stress as well as thickness of deformation layer were decreased by ECMP.
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