Abstract:In order to test friction coefficient and material removal rate of different abrasive, copper Chemical-Mechanical polishing (CMP) experiment was performed using CETR polisher with wafers in 50.8 mm and deposited 530 nm copper. Surface roughness of wafer polished by different abrasive was measured by ZYGO surface analysis system. Surface of wafer was also analyzed by means of SEM to explore wear scar of abrasive. During polishing test, polishing carrier rotated at 150~250 r/min,applied pressure was 26.7~53.4 N, and slurry flow rate was 100 mL/min. It was found that concentration and particle size have directly effect on friction coefficient of copper CMP process. Friction coefficient using slurry with 5% 25 nm colloidal silica is lower than that using ultrapure water. Friction coefficient increased with abrasive size and concentration increased. Size of abrasive directly influencs material removal rate of copper CMP. Under the same condition, material removal rate of copper polished with10% 25 nm colloidal silica is 50.7 nm/min,but for1μm sized Al_2O_3 abrasive, material removal rate of copper is 246.3 nm/min. Abrasive made surface rough during process of CMP. Surface roughness of wafer polished with 10wt%25 nm colloidal silica is 34.3 , which is also large than that of original surface. Ultrapure water and pure abrasive as slurry without addition of any additive can produce nano meter scale scratch on surface.

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