Resistivity of Nano-Devices Based on MoS2 in Low Temperature

Z. H. Tao,H. M. Dong,F. Huang,J. L. Liu
DOI: https://doi.org/10.1080/10584587.2018.1456123
2018-01-01
Integrated Ferroelectrics
Abstract:We present a detailed theoretical study of the electronic transport properties of nano-devices based on MoS2. The transport resistivity is calculated on the basis of the usual momentum-balance equation derived from the semi-classical Boltzmann equation. Moreover, the expression of electron-electron screening is obtained within the random phase approximation. It shows that the resistivity R sub-linearly depends on the impurity density, and is inversely proportional to the electron densities. We obtain low resistivity or high conductivity of nano-devices based on MoS2 by tuning electron density or impurity density. This study is relevant to the application of nano-devices based on MoS2, such as MoS2 field-effect transistors.
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