Abstract:Solar cells have attracted much attention since they can convert solar energy directly into electricity, and have been widely utilized in manufacturing industry and people's daily life. Although the power conversion efficiency (PCE) of single-junction solar cells has gradually improved in recent years, its maximum efficiency is restricted by the Shockley-Queisser (SQ) limit of single-junction solar cells. To exceed the SQ limit and further obtain high efficiency solar cells, researchers have proposed the concept of tandem solar cells. In this work, a systematic theoretical study of chalcopyrite CuGaSe 2 /CuInSe 2 tandem solar cells was carried out by combining first-principle calculations and SCAPS-1D device simulations. Firstly, the electronic structure, defect properties and corresponding macroscopic performance parameters of CuGaSe 2 (CGS) were obtained by first-principles calculations, which were adopted as input parameters for subsequent device simulations of CGS solar cells. Subsequently, the simulations of single-junction CGS and CuInSe 2 (CIS) solar cells were carried out using SCAPS-1D software, respectively. The simulation results for the single junction CIS solar cells are in good agreement with the experimental values. For single-junction CGS cells, the device simulations revealed that CGS single-junction solar cells had the highest short-circuit current (J sc ) and PCE at the growth condition of Cu-rich, Ga-rich and Se-poor chemical growth condition. Further optimization found that the open-circuit voltage (V oc ) and PCE of CGS solar cells can be improved by replacing the electron transport layer (ETL) with ZnSe after the devices with the highest short-circuit current (J sc ). Finally, after the optimized CGS and CIS solar cells were connected in series with two-terminal (2T) monolithic tandem solar cell, the device simulation results show that under the growth temperature of 700 K and the growth environment of Cu-rich, Ga-rich, and Se-poor, with ZnSe as the ETL, the CGS thickness of 2000 nm and the CIS thickness of 1336 nm, the PCE of 2T monolithic CGS/CIS tandem solar cell can reach 28.91 %, which is higher than the recorded efficiency of the current single-junction solar cells, and shows a good application prospect.

Fabrication of Wide Band-Gap CuGaSe2 Solar Cells for Tandem Device Applications by Sputtering from a Ternary Target and Post Selenization Treatment

Stable Wide-Bandgap Perovskite Solar Cells for Tandem Applications

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

Study on the Thickness Effect of Wide-Bandgap CuGaSe2 Thin Films for Applications with Tandem Solar Cells

Highly efficient Ag-alloyed Cu(In,Ga)Se2 solar cells with wide bandgaps and their application to chalcopyrite-based tandem solar cells

Top cell design and optimization of all-chalcopyrite CuGaSe 2 /CuInSe 2 two-terminal tandem solar cells: first-principles calculations and device simulations

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Fabrication and Optimization of CdSe Solar Cells for Possible Top Cell of Silicon‐Based Tandem Devices

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Over 28% Efficiency Perovskite/Cu(InGa)Se2 Tandem Solar Cells: Highly Efficient Sub-cells and Their Bandgap Matching

Suitable Top Cell Partners for Copper Indium Gallium Selenide‐Based Tandem Solar Cells to Achieve >30% Efficiency

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Effect of Se Flux on CuGaSe 2 Absorbers Deposited on ITO-coated SLG Substrates by Using a Three-Stage Co-Evaporation Process

Cu(In,Ga)Se2 solar cell with 16.7% active‐area efficiency achieved by sputtering from a quaternary target

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells.

Cu(In,Ga)Se-2 Solar Cells Fabricated by Sputtering from Copper-Poor and Selenium-Rich Ceramic Target with Selenium-Free Post Treatment

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells

The Impact of Ga and S Concentration and Gradient in Cu(In,Ga)(Se,S)2 Solar Cells

Toward High-Efficiency Cu(In,Ga)(S,Se) 2 Solar Cells by a Simultaneous Selenization and Sulfurization Rapid Thermal Process