Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

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Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Reconfigurable Logic Operation Scheme Based on Gate-Tunable CBRAM

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design

A Novel Capacitor-based Stateful Logic Operation Scheme for In-memory Computing in 1T1R RRAM Array

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM)

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

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Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Design and Implementation of Full Adder in One-Transistor-One-Resistor RRAM Array

A Novel Parallel In-Memory Logic Array Based on Programmable Diodes

A 28-Nm Compute SRAM with Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

A Novel Resistive Memory-based Process-in-memory Architecture for Efficient Logic and Add Operations

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

CLEAR: a Full-Stack Chip-in-loop Emulator for Analog RRAM Based Computing-in-memory System