Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

A 28-Nm Compute SRAM with Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

14.2 A Compute SRAM with Bit-Serial Integer/Floating-Point Operations for Programmable In-Memory Vector Acceleration

A 1.041-Mb/mm 2 27.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

A 6T-SRAM-Based Computing-In-Memory Architecture using 22nm FD-SOI Device

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Configurable in-memory computing architecture based on dual-port SRAM

A 1.23-Ghz 16-Kb Programmable and Generic Processing-in-SRAM Accelerator in 65Nm

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

An 11T SRAM Cell for the Dual-Direction In-Array Logic/CAM Operations

RRAM-Based Single Device for Vector Multiplication and Multibit Storage with Ultrahigh Area Efficiency

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

A 10T SRAM with Two Read and Write Modes Across Row and Column for CAM Operation and Computing In-Memory

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output