Abstract:Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-induced phase transitions in silicon (Si) using a hybrid atomistic-continuum model. The model combines the strengths of Molecular Dynamics (MD) simulations for atomisticscale descriptions of non-equilibrium phase transitions with a continuum approach to account for laser-generated free carriers. This framework captures the generation and diffusion of electronhole pairs, thermal diffusion, and electron-phonon coupling during laser energy deposition. We apply the model to determine the melting depth as a function of fluence for a 100 fs laser pulse at 800 nm. The results show that the stand-alone continuum approach underestimates the melting threshold compared to the hybrid atomistic-continuum model, which incorporates the detailed kinetics of melting. Additionally, we explore the effect of crystal orientation on melting dynamics. Lastly, the MD model is used to identify the conditions leading to the amorphization of the Si surface. These findings provide valuable insights into experimental observations of Si surface structuring induced by ultrashort laser pulses.

Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser

Study on the Inversion of Doped Concentration Induced by Millisecond Pulsed Laser Irradiation Silicon-Based Avalanche Photodiode.

Simulation and Analysis of the Time Evolution of Laser Power and Temperature in Static Pulsed XPALs

Numerical simulation of thermal and stress field in silicon-based positive-intrinsic-negative photodiode irradiated by millisecond-pulsed laser

Experimental study of millisecond pulse laser ablation biased silicon-based PIN photodiodes

Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses

Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Molecular Dynamics Simulation Of Ultra-Fast Thermal Transition In Thin Foil Irradiated By High Power Ultra-Short Laser

Preliminary study on temperature distribution and pyroelectric current of LiNbO 3 heated by nanosecond pulse laser

Preliminary Study on Temperature Distribution and Pyroelectric Current of LiNbO3 Heated by Nanosecond Pulse Laser

Numerical investigation of heat transfer in ultrafast laser processing of silicon material

Numerical simulation of thermo-mechanical behavior in high power diode laser arrays

Three-temperature modeling of laser-induced damage process in silicon

Microscale Spatially Resolved Thermal Response of Si Nanotip to Laser Irradiation

Research of temperature field and thermal stress field of CCD under laser irradiation

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Simulation and Experimental Study on Temperature Fields for Laser Assisted Machining of Silicon Nitride

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse