Abstract:Data-centric computing including data analytics, machine learning and AI is the main driving force for high-end performance 3D microelectronic packaging. TSV -based technology has enabled the Foveros 3D packaging from Intel, the 3D system integration SoIC from TSMC, and the Xtacking from YMTC. However, thermally induced protrusion of TSV still remains a reliability challenge and the routine finite-element based thermo-mechanical modeling and analysis can only find its limitations as variation in materials and packaging is becoming a much bigger and complex problem as process nodes pushed towards 3/2 nm nodes and beyond. While the simulation results from the previous PFC studies have shed some light on the atomic scale mechanisms underlying protrusion, further information regarding the distribution of internal stress and strain accompanying the atomic scale microstructural evolution and plastic deformation in deep-trench TSV s is missing. In addition, the sizes of the simulated TSVs are in the order of a few nanometers in diameter. It is necessary, therefore, to further extend the capability of the PFC model and make it capable of modeling TSV s and interconnects with dimensions covering the whole spectrum from atomic scale to nanoscale, and from nanoscale to micron scale. This paper aims to simulate TSV protrusion from atomic to micron scales using the recently developed APFC models and derive the strain and stress distributions in the TSV s accompanying the microstructural evolution. It is significantly important to obtain such data to assist the further understanding on the cross-scale mechanisms of TSV protrusion and the consequences of its variations on the functionality and reliability of individual devices, and even the integrated systems at the current and future more advanced process nodes.

The Protrusion Behaviors in Cu-TSV During Heating and Cooling Process

A Study of the Global and Local Cu Protrusion in Cu-Filled Through Silicon Vias Under Heat Treatment

Study on TSV-Cu protrusion under different annealing conditions and optimization

Three-dimensional Simulation of the Effects of Cu Protrusion of Cu-filled TSVs on Thermal Fatigue Behavior of Micro-Bump Joints in 3D Integration

Effect of thermal annealing on TSV Cu protrusion and local stress

Optimization of thermal loads in TSV fabrication process based on real-time micro deformation process analysis of copper

Influence of inhomogeneous anisotropic Copper grains in TSV on the thermo-mechanical behaviors in the annealing process

Effects of Post-Cmp Annealing on TSV Cu Protrusion and Leakage Current

Study on the Relationship Between Cu Protrusion Behavior and Stresses Evolution in the Through-Silicon Via Characterized by In-Situ Μ-Raman Spectroscopy

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Modeling and Characterization of Annealing-Induced Cu Protrusion of TSVs with Polyimide Liner Considering Diffusion Creep Behavior

A View on Annealing Behavior of Cu-Filled Through-Silicon Vias (Tsv)

Study of the Influence of Elastic Anisotropy of Cu on Thermo-Mechanical Behavior and Cu Protrusion of Through Silicon Vias Using Combined Phase Field and Finite Element Methods

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Thermomechanical Reliability of a Cu-TSV Integration Model Based on 3D Fabrication Processes

Cu pumping effect under different annealing conditions

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

The Influences of Grain Size Distributions on Thermal-Stresses in Cu-TSV

In Situ Measurement on TSV-Cu Deformation with Hotplate System Based on Sheet Resistance

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Simulation on TSV Protrusion from Atomic to Micron Scales