Abstract:Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

An Al$_{0.25}$Ga$_{0.75}$N/GaN Lateral Field Emission Device with a Nano Void Channel

A Variable Nanotrench Structure for Electric Field Modulation in AlGaN/GaN Devices

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Field emission from AlGaN nanowires with low turn-on field

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel

Graphene/ZnO Nanowire/p-GaN Vertical Junction for a High-Performance Nanoscale Light Source.

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

Novel AlGaN/GaN SBDs with Nanoscale Multi-Channel for Gradient 2DEG Modulation

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Fabrication of GaN-based micro-cavity light emitters