Abstract:In this work, acetylacetone assisted solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) using Al2O3 as gate dielectrics were investigated. Normally, fully covered Al2O3 thin films are difficult to achieve by spin coating with conventional solvent, such as 2-methoxyethanol, due to the poor wettability of highly doped silicon. Here, a conventional aluminum nitrate solution with an additive was designed to spin coat robust continuous Al2O3 thin films, resulting from improved solution hydrophilic with a contact angle of 17 degrees. For active layer fabrication, we utilized the previous reported combustion process to lower treatment temperature, which could be confined in the range from 220 degrees C to 300 degrees C, without losing the device performance. Results show that all the devices performed well. Especially, after 240 degrees C annealing of both Al2O3 (in thickness of around 45 nm) and IGZO thin films (in thickness of around 30 nm), we have obtained the following device parameters, namely a Al2O3 dielectric breakdown electric field at 7.8 MV cm(-1), a current density of around 1 x 10(-6) A cm(-2) in the voltage range of -3 V to 3 V, a areal capacitance of 291 nF cm(-2) at 100 Hz, a carrier mobility of 0.74 cm(2) V-1 s(-1), a threshold voltage of -0.4 V, a current on-off ratio of 6 x 10(3), a subthreshold swing of 375 mV per decade. Fabrication of combustion-processed active layers and our facile solution processed high-k dielectrics provides a feasible approach for low cost oxide flexible TFTs applications.

One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed Al X O Y Gate Dielectric

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

One-Volt, Solution-Processed InZnO Thin-Film Transistors

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

Low-voltage, Solution-Processed InZnO Thin-Film Transistors with Enhanced Performance Achieved by Bilayer Gate Dielectrics

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Chitosan-Gated Low-Voltage Transparent Indium-Free Aluminum-Doped Zinc Oxide Thin-Film Transistors

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Effect of Gate Insulator Thickness on Device Performance of Ingazno Thin-Film Transistors