Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

Effect of Gate Insulator Thickness on Device Performance of Ingazno Thin-Film Transistors

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Igzo Thin Film Transistors with Al2o3 Gate Insulators Fabricated at Different Temperatures

The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors

Influence of the InGaZnO channel layer thickness on the performance of thin film transistors

The Al2O3 Gate Insulator Modified by SiO2 Film to Improve the Performance of IGZO TFTs

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

ZrO2 Insulator Modified by a Thin Al2O3 Film to Enhance the Performance of InGaZnO Thin-Film Transistor

Effect of Channel Thickness on Electrical Performance of Amorphous Igzo Thin-Film Transistor with Atomic Layer Deposited Alumina Oxide Dielectric

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

High-Performamce Amorphous Ingazno Thin-Film Transistor with Zrlao Gate Dielectric Fabricated at Room Temperature

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al<sub>x</sub>O<sub>y</sub> dielectrics

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

The influence of the SiO2 gate insulator thickness to the performance and Bias-voltage stress stability of ZnO thin-film-transistors

A-Ingazno Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition