Abstract:Solution-processed high-kappa gate dielectrics, such as Al2O3 and HfO2, show great potential for use in low-cost electronics. However, high-temperature treatments are generally needed to cure the film, limiting the use in flexible electronics. Here we use anodization, a simple, low-cost, solution-based method, to form thin, conformal, high quality HfOx layers at room temperature. Several anodization voltages were studied, and the relative quantity of Hf-O bonding was found to increase by 10% when increasing anodization voltage from 2 to 3 V, while maintaining almost the same when further increasing the anodization voltage. Conduction mechanisms were analyzed, showing that Schottky emission dominates even for the thinnest oxides. HfOx layers formed by anodization voltages of 2, 3, and 4 V show high capacitance density of 1290, 1160, and 1060 nF/cm(2), which are equivalent to 2.68, 2.97, and 3.26 nm of thermally grown SiO2. Using such high capacitance density insulators, we fabricated InGaZnO (IGZO) thin-film transistors (TFTs) at room temperature, showing a low operating voltage of 0.5 V, one of the lowest for oxide-semiconductor-based TFTs. TFTs gated with HfOx anodized at the optimal voltage, 3 V, show a high current on/off ratio of >10(5), a mobility approaching 10 cm(2)/(V s), and a subthreshold swing as low as 69 mV/dec, close to the theoretical limit at 300 K. The interface trap density was found to be highly related to the quality of the HfOx film, showing a 50% decrease with the increase of anodization voltage from 2 to 3 V. The devices show negligible change after storage in air for 6 months and favorable stability under both positive and negative gate bias stress. Finally, we demonstrate TFTs on plastic substrates, maintaining high quality performance even under a bending radius of 9 mm. As a result, such devices have potential applications in low-cost, low-voltage-operation, low-power electronics.

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al<sub>x</sub>O<sub>y</sub> dielectrics

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High-Performance 1-V IGZO Thin-Film Transistors Gated with Aqueous and Organic Electrolyte-Anodized AlxOy

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Low Voltage Operation of IGZO Thin Film Transistors Enabled by Ultrathin Al2O3 Gate Dielectric

The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Feasibility of Using Sputtered Alox, Film As Gate Insulator for High Performance Ingazno-Tfts

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Effect of Gate Insulator Thickness on Device Performance of Ingazno Thin-Film Transistors

One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed Al X O Y Gate Dielectric

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

The Al2O3 Gate Insulator Modified by SiO2 Film to Improve the Performance of IGZO TFTs

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide