An Experimental Investigation on Laser Assisted Waterjet Microgrooving of GaAs Wafer
Lingyun Duan,Chuanzhen Huang,Dun Liu,Ping Yao,Hanlian Liu,Xiaolan Bai
DOI: https://doi.org/10.21203/rs.3.rs-1286442/v1
2022-01-01
Abstract:Gallium arsenide (GaAs), the most extensively used compound semiconductor material, has historically been difficult to manufacture in wafer fabrication due to its brittle property. A unique method called laser assisted waterjet (LAW) has been developed and utilized to micromachining brittle and fragile materials. The inclined waterjet expels the material heated and softened by the laser and aids in cooling to reduce thermal damage during the machining process. It has a lot of potential as a micromachining tool for GaAs wafers. In this study, microgrooves on GaAs wafers are machined using dry laser, low-pressure waterjet assisted laser (LWAL), and LAW technology. In comparison to dry laser and LWAL, LAW technology can process high-quality grooves with maximum depth, minimal thermal damage, and the maximum depth to width ratio, making it suitable for GaAs wafer micromachining. The mechanism for material removal in GaAs LAW processing is discussed, and it can be concluded that the majority of the material is removed by the impact of the high-pressure waterjet when it reaches the decomposition temperature below the melting point. A full-factorial experiment is carried out on GaAs wafers using LAW technology. The results show that six process parameters, including laser power, waterjet pressure, traverse speed, inclination angle, focal plane position, and processing times, have significant effects on groove depth, groove width, and material removal rate. The groove depth, groove width, and material removal rate is increased with an increase in term of laser power. More energy is wasted when the waterjet pressure is increased, resulting in a reduction in groove depth, groove width, and material removal rate.