Growth of Three-Dimensional Diamond Mosaics by Microwave Plasma-Assisted Chemical Vapor Deposition

G. Shu,B. Dai,V. G. Ralchenko,A. P. Bolshakov,A. A. Khomich,E. E. Ashkinazi,J. Han,J. Zhu

DOI: https://doi.org/10.1039/c7ce01706e

IF: 3.756

2018-01-01

CrystEngComm

Abstract:Growth of novel 3D diamond mosaic structures by MPCVD was realized, clearing the way for complex diamond shapes.

What problem does this paper attempt to address?

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Guoyang Shu,Bing Dai,V. G. Ralchenko,A. P. Bolshakov,A. A. Khomich,E. E. Ashkinazi,V. Yu. Yurov,Kaili Yao,Kang Liu,Jiwen Zhao,Jiecai Han,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.jcrysgro.2018.01.024

IF: 1.8

2018-01-01

Journal of Crystal Growth

Abstract:Epitaxial diamond growth by microwave plasma CVD in a CH4/H-2 mixture was performed on vertically standing single crystal diamond substrates with high aspect (height-to-width) ratio. This "vertical growth" mode allows simultaneous diamond deposition on two large (1 0 0) faces of the substrate, in contrast to only one working face upon conventional horizontal arrangement of the substrate plate. A high plasma density gradient in vertical direction, the characteristic feature of the geometry used (the substrate acts as an antenna), coupled to high substrate temperature gradient (Delta T approximate to 150 degrees C in the particular experiment), are shown to have a strong impact on the epilayer structure, that was characterized with laser scanning microscopy, Raman and photoluminescence confocal spectroscopy mapping across approximate to 3 mm high specimen. The single crystal film transformation to polycrystalline, and further, to nanocrystalline layer, going from top to bottom of the substrate, is described. The vertical distributions of the growth rate, intensity of photoluminescence of NV and SiV color centers imbedded in the diamond film, are measured with high spatial resolution on growth surface and in cross-section, which are also related to the film structure variation. These findings are of importance for search of optimal growth regimes of 3D diamond mosaics and large single crystals by MPCVD. (C) 2018 Elsevier B.V. All rights reserved.
Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Ying Ren,Xiaogang Li,Wei Lv,Haoyong Dong,Qiaohuan Cheng,Feng Yue,Nicolas Wöhrl,Joana Catarina Mendes,Xun Yang,Zhengxin Li

DOI: https://doi.org/10.1007/s10854-024-12267-3

2024-03-06

Journal of Materials Science Materials in Electronics

Abstract:Microwave plasma chemical vapor deposition (MPCVD) is regarded as one of the most promising techniques for the preparation of large-scale and high-quality epitaxial single-crystal diamonds. This review paper provides an overview of recent advancements in MPCVD single-crystal diamond growth, including discussions on the growth mechanism, substrate holder design, and seed crystal screening and pretreatment for achieving homogeneous epitaxial single-crystal diamond. Key growth parameters such as temperature, methane concentration, power density, etc., are investigated to guide the attainment of optimal growth conditions. Furthermore, critical growth techniques like three-dimensional growth, repeated growth, and mosaic splicing are analyzed to enhance the area coverage of single-crystal diamonds. The work on achieving low defect and high purity growth is also elucidated. Additionally, this paper discusses the progress made in n -type and p -type doping of diamond materials. Finally, a summary is provided highlighting the challenges encountered during MPCVD single-crystal diamonds growth.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Yicun Li,Bing Dai,V.G. Ralchenko,Jilei Lyu,Xiaobin Hao,Jiwen Zhao,Sen Zhang,Kang Liu,Jiecai Han,A.P. Bolshakov,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.vacuum.2022.111529

IF: 4

2022-12-01

Vacuum

Abstract:Single-crystal diamond was synthesized in a microwave plasma assisted chemical vapor deposition system with periodical injection of methane/hydrogen mixture in a closed reaction chamber. The gas was refreshed during a short time based on monitoring of carbonaceous species in the plasma with optical emission spectroscopy. The utilization of the precursors was increased with this strategy by about 12 times compared with the common process of the diamond growth using continuous gas flow. The structure of homoepitaxial diamond films produced in common and the periodical injection regimes was analyzed with scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. The samples grown in the gas economy mode demonstrated a faster growth rate and smoother surface.

materials science, multidisciplinary,physics, applied
Very high growth rate chemical vapor deposition of single-crystal diamond.

Chih-Shiue Yan,Yogesh K Vohra,Ho-Kwang Mao,Russell J Hemley

DOI: https://doi.org/10.1073/pnas.152464799

2002-01-01

Abstract:Diamond possesses extraordinary material properties, a result that has given rise to a broad range of scientific and technological applications. This study reports the successful production of high-quality single-crystal diamond with microwave plasma chemical vapor deposition (MPCVD) techniques. The diamond single crystals have smooth, transparent surfaces and other characteristics identical to that of high-pressure, high-temperature synthetic diamond. In addition, the crystals can be produced at growth rates from 50 to 150 mum/h, which is up to 2 orders of magnitude higher than standard processes for making polycrystalline MPCVD diamond. This high-quality single-crystal MPCVD diamond may find numerous applications in electronic devices as high-strength windows and in a new generation of high-pressure instruments requiring large single-crystal anvils.
Scalable Production and Supply Chain of Diamond using Microwave Plasma: a Mini-review

Sergey V. Baryshev,Matthias Muehle

2023-08-01

Abstract:Discovered and reported exactly 40 years ago, microwave plasma assisted chemical vapor deposition (MPACVD) pointed out an economic technology that could potentially produce lab-grown diamond stones at scale. After this breakthrough discovery, demonstrating that diamond can be growth at low pressure and temperature, the progress quickly curbed and synthetic single crystal diamond (SCD) size and quality could not be improved toward attaining requirements critical in solid-state electronics. This led to the early promise of MPACVD to not come true and slowed the level of investments, thereby further stalling the progress in diamond syntheses. With the invention of a few novel homo- and hetero-epitaxy growth techniques, the diamond research and technology has recently reinvigorated. This mini review attempts to capture the momentum of recent progress in diamond MPACVD that could finally bring scalable manufacturing of high quality large size wafers for future electronics and optics.

Applied Physics,Plasma Physics
High-speed growth of high-quality polycrystalline diamond films by MPCVD

Kai Chen,Tao Tao,Wenxiao Hu,Yucong Ye,Kaiwen Zheng,Jiandong Ye,Ting Zhi,Xiwei Wang,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1007/s42823-023-00534-y

2023-05-26

Carbon letters

Abstract:High-quality diamond films have attracted extensive attentions due to their excellent optical and electrical properties. However, several issues, such as random orientation, stress accumulation, and slow growth rate, severely limit its applications. In this paper, high-quality polycrystalline diamond films with highly ordered (100) orientation were prepared by microwave plasma chemical vapor deposition. The effects of growth parameters on the microstructure, quality and residual stress of diamond films were investigated. Experimental results indicate that relatively high temperature at low methane concentration will promote the formation of (100) oriented grains with a low compressive stress. Optimized growth parameters, a methane concentration of 2% along with a pressure of 250 Torr and temperature at 1050 ℃, were used to acquire high growth rate of 7.9 μm/h and narrow full width at half maximum of Raman peak of 5.5 cm−1 revealing a high crystal quality. It demonstrates a promising method for rapid growth of high-quality polycrystalline diamond films with (100) orientation, which is vital for improving the diamond related applications at low cost.

materials science, multidisciplinary,chemistry
Rapid Growth of Single Crystal Diamond at High Energy Density by Plasma Focusing

Li Yicun,Liu Xuedong,Hao Xiaobin,Dai Bing,Lyu Jilei,Zhu Jiaqi

DOI: https://doi.org/10.15541/jim20220633

IF: 1.292

2023-01-01

Journal of Inorganic Materials

Abstract:Single crystal diamond is a kind of crystal material with excellent performance, which has important application value in advanced scientific field. In the field of single crystal diamond growth by microwave plasma chemical vapor deposition (MPCVD), improvement of crystal growth rate is still a key challenge, although corrent high energy density plasma has been a ralatively effective method. In this work, a special plasma focusing structure was designed through magnetohydrodynamic (MHD) model simulation which then was used in the growth experiment based on the simulation. The plasma properties were studied by means of spectral analysis and plasma imaging, and late on single crystal diamond samples were synthesized. The simulation results show that the core electric field and electron density under focusing conditions were 2 times higher than those under normal conditions. The growth experiment results show that plasma with high energy density (793.7 W/cm(3)) is obtained under conventional microwave power (3500 W) and growth pressure (18 kPa), which is consistent with the model calculation results. We find that a certain amount of nitrogen instead of high energy density growth conditions can significantly change the growth morphology and affect the quality of the crystal. With those findings, we realize the growth rate of single crystal diamond up to 97.5 mu m/h. Different from the way to obtain high energy density by increasing the growth pressure, single crystal diamond can be synthesized with high energy density under normal growth pressure and microwave power.
Optimizing MPCVD Systems for Diamond Growth Through Advanced Microwave Transmission Theory

Xiaobin Hao,Yicun Li,Xia Kong,Jilei Lyu,Kunlong Zhao,Jiwen Zhao,Sen Zhang,Dongyue Wen,Kang Liu,V.G. Ralchenko,Benjian Liu,Bing Dai,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.jcrysgro.2024.128008

IF: 1.8

2024-01-01

Journal of Crystal Growth

Abstract:Diamond, renowned for its exceptional properties, stands as the ultimate semiconductor material. Microwave plasma chemical vapor deposition (MPCVD) is pivotal in advancing diamond’s functional applications. The effectiveness of the MPCVD system hinges on the efficient transmission of microwave energy to the resonant cavity. Additionally, the system must form a large-area, high-intensity hemispherical standing-wave electric field in the deposition area. Thus, a well-conceived optimization design for the microwave transmission and resonance systems is imperative. This paper introduces a design methodology for MPCVD systems, aligning plasma requirements for diamond growth with the transmission and distribution characteristics of the microwave electromagnetic field, which means that system optimization can be achieved without the need for complex multiple physical fields simulations. The average electric field intensity up to 3.24 × 105 V/m is obtained by using the dual-objective optimization function as the comprehensive optimization objective of the metal boundaries of the reactor. Based on simulation findings, an MPCVD system operating at 2450 MHz was designed, resulting in a single-crystal diamond with a high average growth rate of 11.5 μm/h. Further reduction of the microwave frequency to 915 MHz enabled the preparation of a 4-inch polycrystalline diamond film, achieving an average growth rate close to 3.5 μm/h.
Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

A.P. Bolshakov,V.G. Ralchenko,V.Y. Yurov,G. Shu,E.V. Bushuev,A.A. Khomich,E.E. Ashkinazi,D.N. Sovyk,I.A. Antonova,S.S. Savin,V.V. Voronov,M.Y. Shevchenko,B. Dai,J. Zhu

DOI: https://doi.org/10.1016/j.diamond.2019.107466

IF: 3.806

2019-08-01

Diamond and Related Materials

Abstract:We report on growth of polycrystalline diamond (PCD) by chemical vapor deposition (CVD) in a microwave plasma reactor under high absorbed microwave power density (MWPD) and high pressures, in conditions more typical for single crystal diamond epitaxy. The growth rates as high as 30–36 μm/h have been achieved in CH4-H2 mixtures at pressure of 320 Torr and MWPD of ~700 W/cm3 even at relatively low (3%) CH4 concentration, using PCD substrates with diameter of 5–20 mm and different textures. The structure and quality of the produced PCD thick films were assessed with SEM, Raman and X-ray diffraction. The plasma shapes and spatial profiles of species (excited atomic hydrogen and C2 dimer) were characterized with spatially resolved optical emission spectroscopy (OES) at moderate and high MWPD. The maximum rotational gas temperature Tg significantly enhanced to 3700 K in the latter case (675 W/cm3) compared with Tg ≈ 3100 K for lower pressure and MWPD (100 Torr, 160 W/cm3), being in agreement with the obtained high growth rates at high pressures. Analysis of numerous literature data on PCD growth rate vs substrate size in MPCVD reactors reveals a clear trend of enhanced growth rate with diminishing of the substrate dimension, our findings further confirming this tendency indirectly related to a change in absorbed power density.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

qi liang,cheng yi chin,joseph lai,chihshiue yan,yufei meng,hokwang mao,russell j hemley

DOI: https://doi.org/10.1063/1.3072352

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 mu m/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.
Single crystal diamond growth by MPCVD at subatmospheric pressures

A.P. Bolshakov,V.G. Ralchenko,Guoyang Shu,Bing Dai,V.Yu. Yurov,E.V. Bushuev,A.A. Khomich,A.S. Altakhov,E.E. Ashkinazi,I.A. Antonova,A.V. Vlasov,V.V. Voronov,Y.Y. Sizov,S.K. Vartapetov,V.I. Konov,J. Zhu

DOI: https://doi.org/10.1016/j.mtcomm.2020.101635

IF: 3.8

2020-12-01

Materials Today Communications

Abstract:Microwave plasma assisted chemical vapor deposition (MPCVD) is the established technique to produce high quality single crystal diamond (SCD). While typical pressures for SCD growth regimes in methane-hydrogen plasma are currently within 100–300 Torr, a transition to much high pressures promises enhanced growth rates. Here, we report on successful SCD synthesis by MPCVD in CH4-H2 gas mixtures at pressures up to 600 Tорр. A strong change of the plasma shape and volume (the latter shrinks by 10 times at fixed MW power) with pressure rise from 100 to 600 Torr was observed, still keeping the plasma stable. The record high absorbed MW power density of ≈1800 W/cm3 was achieved at 600 Torr. Optical emission spectroscopy (OES) was used for the plasma analysis via monitoring emission intensities of radicals Hα, C2 and CH. The gas temperature Tg determined from analysis of rotational fine structure of OES Swan transitions of dimer C2 (516 nm) turned out to be essentially constant ∼ 3100 ± 150 K over the pressure range explored. The diamond growth rate is found to increase by an order of magnitude with pressure to achieve 57 μm/h at 500 Torr at relatively low (4%) CH4 concentration, as measured in situ using low-coherence interferometry, but declined at further pressure increase. The produced films were characterized with SEM, XRD, Raman and photoluminescence spectroscopy, and a high/moderate quality of the obtained material was confirmed.

materials science, multidisciplinary
THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS

Fan LIU,Jun WENG,Jian-hua WANG,Qiu-liang WANG,Qi SUN

DOI: https://doi.org/10.3969/j.issn.1006-7086.2016.03.002

2016-01-01

Abstract:Microwave Plasma CVD(MPCVD)is one of the promising method for high growth rate,high quality, and large area diamond films deposition,and the research of the MPCVD device have received extensive attention of the researchers and industry. The properties and different preparation methods of diamond films were briefly summarized,the growth mechanism of CVD diamond films was discussed at the same time in the paper. The structure characteristics and working principle of various kinds of MPCVD device were emphatically elaborated,meanwhile,the advantages and disad-vantages of all this kinds of devices were analyzed. The results show that:development of MPCVD device which has the high quality factor of resonance cavity and the uniform microwave plasma is the main problem of diamond films in indus-trial application.
Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics

Li Yicun,Hao Xiaobin,Dai Bing,Wen Dongyue,Zhu Jiaqi,Geng Fangjuan,Yue Weiping,Lin Weiqun

DOI: https://doi.org/10.15541/jim20230164

2023-01-01

Abstract:Microwave plasma chemical vapor deposition (MPCVD) technology is an ideal way to prepare large size and high-quality single crystal diamonds. However, the complexity of MPCVD single crystal diamond growth and the diversity of crystal growth requirements make it difficult to optimize the growth process. To address this issue, a systematic design method for MPCVD single crystal diamond growth based on plasma diagnostic technology was proposed, using plasma imaging and spectral analysis to quantitatively diagnose microwave plasma. The physical coupling characteristics and quantitative relationship between pressure, microwave(MW) power, plasma properties, and substrate temperature were studied by using home-made MPCVD system. And the size of major axis, precursor group concentration and distribution, energy density, and other data of the plasma under different parameters were obtained. Based on experimental data, the growth process map of single crystal diamond was obtained. According to this map, we selected process parameters by growth temperature and growth area. Through experimental verification, it is shown that this map is usful for guiding prediction with parameter error of less than 5%. Simultaneously, based on the predicted map, growth of single crystal diamond under different plasma energy densitiesis studied. At lower power (2600 W), a higher energy density (148.5 W/cm(3)) was obtained, and the concentration of carbon containing precursors was higher than that of the other parameters, resulting in a higher growth rate (8.9 mu m/h). By this method system, effective plasma control and process optimization can be carried out meeting for different single crystal diamond growth.
Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Xiwei Wang,Peng Duan,Zhenzhong Cao,Changjiang Liu,Dufu Wang,Yan Peng,Xiangang Xu,Xiaobo Hu

DOI: https://doi.org/10.3390/ma13010091

2019-12-23

Abstract:The diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16-17 μm/h during 48 hours' growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200-400 μm. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.
Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Qi Liang,Chih-shiue Yan,Joseph Lai,Yu-fei Meng,Szczesny Krasnicki,Haiyun Shu,Ho-kwang Mao,Russell J. Hemley

DOI: https://doi.org/10.1021/cg500693d

IF: 4.01

2014-01-01

Crystal Growth & Design

Abstract:A 75 kW, 915 MHz microwave plasma-assisted chemical vapor deposition system was adapted and utilized to scale up production of high-quality single-crystal diamonds at high growth rates. A 300 mm diameter plasma discharge was achieved with uniform temperature distributions of +/- 250 degrees C on up to 300 single-crystal diamond substrates. Diamond single crystals were synthesized from H-2/CH4/N-2 gas mixtures at pressures between 90 and 180 Torr, with recorded growth rates from 10 to 30 mu m/h. The source of N-2 was from vacuum chamber leakage, and it greatly affected synthesis chemistry. Optical emission spectroscopy was used to probe the localized plasma chemistry and plasma uniformity at different gas pressures. Production rates of up to 100 g/day of single-crystal diamonds were demonstrated, with 25% of the material categorized as colorless. Crystals up to 3.5 mm in thickness could be produced during a single deposition run. The quality of the crystals produced was assessed by photoluminescence and UV-visible absorption spectroscopies.
Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Yan-Kai Tzeng,Jingyuan Linda Zhang,Haiyu Lu,Hitoshi Ishiwata,Jeremy Dahl,Robert M K Carlson,Hao Yan,Peter R Schreiner,Jelena Vučković,Zhi-Xun Shen,Nicholas Melosh,Steven Chu

DOI: https://doi.org/10.1021/acs.nanolett.6b04543

2017-03-08

Abstract:Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. This variation allowed rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.
A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films

J. J. Su,Y. F. Li,X. L. Li,P. L. Yao,Yanqing Liu,M. H. Ding,Weizhong Tang

DOI: https://doi.org/10.1016/j.diamond.2013.12.001

IF: 3.806

2014-01-01

Diamond and Related Materials

Abstract:With the aid of numerical simulation, a novel microwave plasma reactor for diamond films deposition has been designed. The new reactor possesses a unique structure, neither purely cylindrical nor purely ellipsoidal, but a combination of the both. In this paper, the design strategy of the new reactor together with a simple but reliable phenomenological simulation method will be described. Preliminary experiments show that uniform diamond films of high quality could be deposited using the new reactor, and the deposition rate of diamond films is typically about 3μm/h at 6kW input power level on a 2inch diameter silicon substrate.
Vapor phase nucleation and sedimentation of dispersed nanodiamonds by MPCVD

Ying Liang,Kang Liu,Benjian Liu,Yicun Li,Saifei Fan,Bing Dai,Yumin Zhang,Jiaqi Zhu

DOI: https://doi.org/10.1016/j.powtec.2024.119507

IF: 5.64

2024-03-01

Powder Technology

Abstract:Microwave plasma assisted chemical vapor deposition (MPCVD) is a technique for preparing high-quality diamonds. However, the low yield and easy bonding between particles are drawbacks in the preparation of nanodiamond (ND). These issues are mainly caused by the adverse phenomena such as substrate nucleation and the continuous growth of particles. To inhibit these phenomena, diamond vapor phase nucleation (VPN) is realized by adjusting the spatial distribution of the carbon and hydrogen groups in plasma. In this environment, NDs nucleate, grow and fall on the disk. As such, dispersed nanodiamonds are obtained and the yield limit of MPCVD prepared NDs is broken. Further, we analyze and improve the VPN growth mechanism. This study presents a new mode of using MPCVD, which can be used to grow dispersed NDs. The development and improvement of this method is expected to provide higher quality NDs for drug transportation, biological imaging, and quantum light sources.

engineering, chemical
Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

G. Shu,V. G. Ralchenko,A. P. Bolshakov,E. V. Zavedeev,A. A. Khomich,P. A. Pivovarov,E. E. Ashkinazi,V. I. Konov,B. Dai,J. Han,J. Zhu

DOI: https://doi.org/10.1039/c9ce01933b

IF: 3.756

2020-01-01

CrystEngComm

Abstract:Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

chemistry, multidisciplinary,crystallography
High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition

Wenxiao Hu,Kai Chen,Tao Tao,Xinxin Yu,Jianjun Zhou,Zili Xie,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1016/j.tsf.2022.139571

IF: 2.1

2022-01-01

Thin Solid Films

Abstract:High quality single crystal diamond builds the foundation for the applications in high-power, high-frequency electronic devices. In this paper, high-quality (100) single-crystal diamond film grown by microwave plasma chemical vapor deposition (MPCVD) was studied. By optimizing the pre-etching process before growth, where the distance between the substrate and plasma plays an important role, high-quality chemical vapor deposition (CVD) diamond layer with a smooth surface can be acquired. The root-mean-square roughness of CVD diamond surface was reduced to 0.2 nm ∼ 0.5 nm within 5 μm × 5 μm area while maintaining the growth at a high rate of 3 μm/h ∼ 30 μm/h. The sheet resistance of the CVD diamond layer was 6.1 kΩ/sq by transmission line method, indicating a high potential to fabricate high-performance hydrogen-terminal diamond-based electronic devices.

Growth of Three-Dimensional Diamond Mosaics by Microwave Plasma-Assisted Chemical Vapor Deposition

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Very high growth rate chemical vapor deposition of single-crystal diamond.

Scalable Production and Supply Chain of Diamond using Microwave Plasma: a Mini-review

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Rapid Growth of Single Crystal Diamond at High Energy Density by Plasma Focusing

Optimizing MPCVD Systems for Diamond Growth Through Advanced Microwave Transmission Theory

Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Single crystal diamond growth by MPCVD at subatmospheric pressures

THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS

Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics

Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films

Vapor phase nucleation and sedimentation of dispersed nanodiamonds by MPCVD

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

High-rate growth of single-crystal diamond with an atomically flat surface by microwave plasma chemical vapor deposition