Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Improvement of Slope Efficiency of GaN-Based Blue Laser Diodes by Using Asymmetric MQW and InxGa1-xN Lower Waveguide

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Design and Growth of GaN-based Blue and Green Laser Diodes

Improvement of Characteristics of InGaN-based Laser Diodes with Undoped InGaN Upper Waveguide Layer

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

High Efficient GaN-based Laser Diodes with Tunnel Junction

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Optimized Layers Design for AlGaN/GaN/InGaN Symmetrical Separate Confinement Heterojunction Multi-Quantum Well Laser Diode

Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode

Improving Output Power Of Ingan Laser Diode Using Asymmetric In0.15ga0.85n/In0.02ga0.98n Multiple Quantum Wells

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Structure Design of InGaN-based Blue Laser Diodes with ITO and Nanoporous GaN Cladding Layers

Strain-Related Degradation of GaN-Based Blue Laser Diodes