Abstract:The demand for high-power blue laser diodes (LDs) in the range above 2 W has been steadily increasing due to their applications in solid-state lighting, projection displays, high-density optical data storage and underwater communication. However, current designs face limitations in terms of achieving both high power output and efficiency. This work focuses on the design, development and numerical analysis of a blue LD utilizing group-III nitride superlattice structures. The present study aims to overcome design challenges by investigating the fundamental factors affecting the performance of blue LDs based on superlattice InGaN structures through careful device parameter optimization. The results show that our device successfully emits at around 430 nm wavelength and is capable of achieving a differential quantum efficiency of 46.91%, with a maximal optical power output of 2.18 W for 1.71 A of current for a strip width of 15 μm. However, when the strip width is increased to 20 μm, 4.6 W optical power is achieved with 3 A of injection current. Numerical studies are performed with several calibrated physics models and finite-difference time-domain techniques. Our results provide an insight into the potential of using superlattice group-III nitride structures to enhance the performance of blue LDs, opening up new possibilities for high-power and high-efficiency devices in the future.

Design and Growth of GaN-based Blue and Green Laser Diodes

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Different Influences of U-Ingan Upper Waveguide on the Performance of GaN-based Blue and Green Laser Diodes

Suppression of Optical Field Leakage to GaN Substrate in GaN-based Green Laser Diode

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

The Blue Laser Diode: GaN based Light Emitters and Lasers

Characterization of GaInN/GaN layers for green emitting laser diodes

Design and fabrication of high power InGaN blue laser diode over 8 W

High-power Hybrid GaN-based Green Laser Diodes with ITO Cladding Layer

Improvement of Slope Efficiency of GaN-Based Blue Laser Diodes by Using Asymmetric MQW and InxGa1-xN Lower Waveguide

Design and analysis of a group-III nitride superlattice structure based semiconductor laser diode for blue region emission

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Status of GaN-based green light-emitting diodes*

Enhancing the Performance of GaN Based LDs by Using Low in Content InGaN Instead of GaN As Lower Waveguide Layer

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide