Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Design and fabrication of high power InGaN blue laser diode over 8 W

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Fabrication and Characterization of High Power Ingan Blue-Violet Lasers with an Array Structure

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Design and Growth of GaN-based Blue and Green Laser Diodes

Design and analysis of a group-III nitride superlattice structure based semiconductor laser diode for blue region emission

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Enhancing the Blue GaN Laser Diodes by Modifying the First Barrier Structure and Adjusting the Growth Conditions of Quantum Wells

High Power Gan-Based Blue Lasers

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells